? semiconductor components industries, llc, 2009 january, 2009 ? rev. 1 1 publication order number: MBR20L80CT/d MBR20L80CT, mbrf20l80ct switchmode ? power rectifier 80 v, 20 a features and benefits ? low power loss/high efficiency ? high surge capacity ? 20 a total (10 a per diode leg) ? these are pb ? free devices applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? esd rating: human body model = 3b machine model = c maximum ratings please see the table on the following page to ? 220ab case 221a plastic 3 4 1 schottky barrier rectifier 20 amperes 80 volts 1 3 2, 4 2 marking diagram ayww b20l80g aka a = assembly location y = year ww = work week b20l80 = device code g = pb ? free package aka = polarity designator http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information isolated to ? 220 case 221d style 3 3 1 2 ayww b20l80g aka
MBR20L80CT, mbrf20l80ct http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 80 v average rectified forward current (t c = 137 c) per diode per device i f(av) 10 20 a peak repetitive forward current (square wave, 20 khz, t c = 151 c) i fm 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 175 a storage temperature t stg ? 65 to +175 c operating junction temperature (note 1) t j ? 20 to +150 c esd ratings: machine model = c human body model = 3b > 400 > 8000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics characteristic symbol value unit maximum thermal resistance (MBR20L80CT) ? junction ? to ? case ? junction ? to ? ambient (mbrf20l80ct) ? junction ? to ? case ? junction ? to ? ambient r jc r ja r jc r ja 2.0 70 4.2 75 c/w electrical characteristics (per diode leg) characteristic symbol min typ max unit maximum instantaneous forward voltage (note 2) (i f = 3.0 a, t j = 25 c) (i f = 3.0 a, t j = 125 c) (i f = 10 a, t j = 25 c) (i f = 10 a, t j = 125 c) (i f = 20 a, t j = 25 c) (i f = 20 a, t j = 125 c) v f ? ? ? ? ? ? 0.45 0.35 0.56 0.51 0.69 0.62 0.50 0.44 0.67 0.61 0.85 0.74 v maximum instantaneous reverse current (note 2) (rated dc voltage, t j = 125 c) (rated dc voltage, t j = 25 c) i r ? ? 30 0.06 50 0.50 ma 2. pulse test: pulse width = 300 s, duty cycle 2.0%. device ordering information device order number package type shipping ? MBR20L80CTg to ? 220ab (pb ? free) 50 units / rail mbrf20l80ctg to ? 220fp (pb ? free) 50 units / rail
MBR20L80CT, mbrf20l80ct http://onsemi.com 3 0.1 1.0 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 150 c 125 c t j = 25 c i f , instantaneous forward current (a) v f , instantaneous forward voltage (v) figure 1. typical forward voltage 0.1 1.0 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v f , instantaneous forward voltage (v) figure 2. maximum forward voltage i f , instantaneous forward current (a) 150 c 125 c t j = 25 c 1.0e ? 07 1.0e ? 06 1.0e ? 05 1.0e ? 04 1.0e ? 03 1.0e ? 02 1.0e ? 01 1.0e+00 0 1020304050607080 v r , reverse voltage (v) figure 3. typical reverse voltage i r , reverse current (a) 125 c t j = 25 c 150 c 1.0e ? 07 1.0e ? 06 1.0e ? 05 1.0e ? 04 1.0e ? 03 1.0e ? 02 1.0e ? 01 1.0e+00 0 1020304050607080 125 c t j = 25 c 150 c v r , reverse voltage (v) figure 4. maximum reverse voltage i r , reverse current (a) 0 2 4 6 8 10 12 14 16 18 20 110 115 120 125 130 135 140 145 150 155 160 dc square wave r jc = 2 c/w i f , average forward current (a) t c , case temperature ( c) figure 5. current derating, case per leg ? MBR20L80CTg 0 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 r ja = 70 c/w i f , average forward current (a) t a , ambient temperature ( c) figure 6. current derating, ambient per leg ? MBR20L80CTg dc square wave
MBR20L80CT, mbrf20l80ct http://onsemi.com 4 0 2 4 6 8 10 12 14 16 18 20 80 90 100 110 120 130 140 150 160 i f , average forward current (a) t c , case temperature ( c) figure 7. current derating, case per leg ? mbrf20l80ctg dc square wave r jc = 4.2 c/w 0 1 2 3 4 5 6 0 20 40 80 100 120 140 60 160 t a , ambient temperature ( c) figure 8. current derating, ambient per leg ? mbrf20l80ctg r jc = 75 c/w square wave dc i f , average forward current (a) 0 2 4 6 8 10 12 14 16 18 02468101214161820 dc square wave p fo , average power dissipation (w) i o , average forward current (a) figure 9. forward power dissipation t j = 150 c 10 100 1000 10000 0 1020304050607080 t j = 25 c v r , reverse voltage (v) figure 10. capacitance c, capacitance (pf) r(t), transient thermal resistance figure 11. thermal response junction ? to ? ambient for MBR20L80CT 1000 0.1 0.00001 t 1 , time (sec) 1 0.0001 0.001 0.01 1 10 100 0.000001 0.1 10 100 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.01
MBR20L80CT, mbrf20l80ct http://onsemi.com 5 r(t) , transient thermal resistance figure 12. thermal response junction ? to ? case for MBR20L80CT 1000 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 13. thermal response junction ? to ? case for mbrf20l80ct t 1 , time (sec) figure 14. thermal response junction ? to ? ambient for mbrf20l80ct 0.1 10 0.001 1.0 10 100 1000 0.1 0.000001 z jc (t) = r(t) r jc r jc = 4.2 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 0.1 100 0.001 1.0 10 100 1000 0.1 0.000001 z jc (t) = r(t) r jc r jc = 4.2 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 1.0 0.01 0.01 0.001 0.0001 0.00001 10 r(t), transient thermal resistance t 1 , time (sec)
MBR20L80CT, mbrf20l80ct http://onsemi.com 6 package dimensions to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 6: pin 1. anode 2. cathode 3. anode 4. cathode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j
MBR20L80CT, mbrf20l80ct http://onsemi.com 7 package dimensions to ? 220 fullpak case 221d ? 03 issue j dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. style 3: pin 1. anode 2. cathode 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 MBR20L80CT/d switchmode is a trademark of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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